8550SL-x-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

8550S

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R206-002,E

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNITS

Collector-Base Voltage

VCBO

-30

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-5

Collector Current

-700

SOT-23

350

Collector Dissipation(Ta=25°C)

TO-92

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100μA, IE=0

-30

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA, IB=0

-20

Emitter-Base Breakdown Voltage

BVEBO

IE=-100μA, IC =0

-5

Collector Cut-off Current

ICBO

VCB=-30V, IE=0

-1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC =0

-100

hFE1

VCE=-1V, IC=-1mA

100

hFE2

VCE=-1V, IC=-150 mA

120

400

DC Current Gain

hFE3

VCE=-1V, IC=-500mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-500mA, IB=-50mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-500mA, IB=-50mA

-1.2

Base-Emitter Saturation Voltage

VBE

VCE=-1V, IC=-10mA

-1.0

Current Gain Bandwidth Product

VCE=-10V, IC=-50mA

100

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

9.0

CLASSIFICATION OF hFE2

RANK

RANGE

120-200

160-300

280-400

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