9013

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-030.Ba

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

40

V

Collector-emitter voltage

20

V

Emitter-base voltage

5

V

Collector current

500

mA

Collector dissipation

625

mW

Junction Temperature

125

℃

Storage Temperature

-55 ~ +150

℃

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

40

V

Collector-emitter breakdown voltage

20

V

Emitter-base breakdown voltage

5

V

Collector cutoff current

100

nA

Emitter cutoff current

100

nA

DC current gain

64

40

120

120

300

Collector-emitter saturation voltage

0.16

0.6

V

Base-emitter saturation voltage

0.91

1.2

V

Base-emitter on voltage

0.6

0.67

0.7

V

CLASSIFICATION OF hFE1

RANK

D

E

F

G

H

I

RANGE

64-91

78-112

96-135

112-166

144-202

190-300

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.