9015

Preliminary

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-032,Ca

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-45

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Collector Dissipation

450

mW

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

-50

V

Collector-Emitter Breakdown Voltage

-45

V

Emitter-Base Breakdown Voltage

-5

V

Collector-Emitter Saturation Voltage

-0.2

-0.7

V

Base-Emitter Saturation Voltage

-0.82 -1.0

V

Base-Emitter On Voltage

-0.6

-0.65 -0.75

V

Collector Cutoff Current

-50

nA

Emitter Cutoff Current

-100

nA

DC Current Gain

60

200

600

Output Capacitance

4.5

7.0

pF

Current Gain-Bandwidth Product

100

190

MHz

Noise Figure

NF

f = 1KHz, Rs = 1K

Ω

0.7

10

dB

RANK

A

B

C

RANGE

60-150

100-300

200-600

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.