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BSS84ZL-AE2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BSS84ZL-AE2-R
功能描述  0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BSS84ZL-AE2-R 数据表(HTML) 2 Page - Unisonic Technologies

  BSS84ZL-AE2-R Datasheet HTML 1Page - Unisonic Technologies BSS84ZL-AE2-R Datasheet HTML 2Page - Unisonic Technologies BSS84ZL-AE2-R Datasheet HTML 3Page - Unisonic Technologies  
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BSS84Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-719.b
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-50
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
DC
ID
-0.13
A
Pulse
-0.52
Power Dissipation
PD
0.36
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
350
/W
℃
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-50
V
Zero Gate Voltage Drain Current
IDSS
VDS=-50V, VGS=0V
-15
µA
Gate–Body Leakage, Forward
IGSS
VDS=0V, VGS=±20V
±10
µA
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=-1m A
-0.8 -1.7
-2
V
Static Drain–Source On–Resistance
RDS(ON)
VGS=-5V, ID=-0.1A
1.2
10
Ω
VGS=-55 V, ID=-0.1A, TJ=125℃
1.9
17
On-State Drain Current
ID(ON)
VGS=-10 V, VDS=-5V
-0.6
A
Forward Transconductance
gFS
VDS=-25V, ID=-0.1A
0.05 0.6
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1MHz
73
pF
Output Capacitance
COSS
10
pF
Reverse Transfer Capacitance
CRSS
5
pF
SWITCHING PARAMETERS
(Note)
Total Gate Charge
QG
VDS=-30V, VGS=-10V,
ID=-0.1A
0.9
1.3
nC
Gate Source Charge
QGS
0.2
nC
Gate Drain Charge
QGD
0.3
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, ID=-0.1A,VGS=-10V,
RG=6Ω,
2.5
5
ns
Turn-ON Rise Time
tR
6.3
13
ns
Turn-OFF Delay Time
tD(OFF)
10
20
ns
Turn-OFF Fall-Time
tF
4.8
9.6
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS= 0V, IS=-0.26A (Note)
-0.8 -1.2
V
Max. Diode Forward Current
IS
-0.13
A
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%



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