BSS138L-AE2-R datasheet(1/3 Pages) UTC

部件名	BSS138L-AE2-R

功能描述	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

PDF	3 Pages

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

BSS138

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-271.e

N-CHANNEL LOGIC LEVEL

ENHANCEMENT MODE

DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to higher

switching frequencies.

FEATURES

* RDS(ON)=0.7Ω @ VGS=10V

* RDS(ON)=1Ω @ VGS=4.5V

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

BSS138L-AE2-R

BSS138G-AE2-R

SOT-23-3

S

G

D

Tape Reel

BSS138L-AL3-R

BSS138G-AL3-R

SOT-323

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

类似零件编号 - BSS138L-AE2-R

制造商	部件名	数据表	功能描述
ON Semiconductor	BSS138L	117Kb / 5P	Power MOSFET 200 mA, 50 V July, 2013 ??Rev. 8
AiT Semiconductor Inc.	BSS138L	478Kb / 6P	POWER MOSFET 0.2A, 50V N-CHANNEL REV2.0
TECH PUBLIC Electronics...	BSS138L	1Mb / 5P	N-Channel Enhancement Mode MOSFET
ON Semiconductor	BSS138L	265Kb / 9P	MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V April, 2024 - Rev. 14
ON Semiconductor	BSS138LT1	79Kb / 6P	Power MOSFET 200 mA, 50 V June, 2004 ??Rev. 3

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