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UD606-TN5-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UD606-TN5-R
功能描述  DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
PDF  9 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UD606-TN5-R 数据表(HTML) 2 Page - Unisonic Technologies

  UD606-TN5-R Datasheet HTML 1Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 2Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 3Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 4Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 5Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 6Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 7Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 8Page - Unisonic Technologies UD606-TN5-R Datasheet HTML 9Page - Unisonic Technologies  
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UD606
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 9
www.unisonic.com.tw
QW-R502-169.A
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
N-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
TC=25°C
ID
8
A
Pulsed Drain Current (Note3)
TC=25°C
IDM
30
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
P-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
TC=25°C
ID
-8
A
Pulsed Drain Current (Note3)
TC=25°C
IDM
-30
A
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
N-Channel
50
60
℃
/W
Junction to Ambient
P-Channel
θJA
40
50
℃
/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
40
V
Drain-Source Leakage Current
IDSS
VDS=32V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
2.3
3
V
VGS=10V, ID=8A
27
33
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=4.5V, ID=6A
37
47
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
404
pF
Output Capacitance
COSS
95
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=20V,f=1MHz
37
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
3.5
ns
Turn-ON Rise Time
tR
6
ns
Turn-OFF Delay Time
tD(OFF)
13.2
ns
Turn-OFF Fall Time
tF
VDS=20V, VGS=10V, RG=3Ω,
RL=2.5Ω
3.5
ns
Total Gate Charge (Note2)
QG
9.2
nC
Gate-Source Charge
QGS
1.6
nC
Gate-Drain Charge
QGD
VDS=20V, VGS=10V, ID=8A
2.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
0.76
1
V
Diode Continuous Forward Current
IS
8
A
Reverse Recovery Time
tRR
22.9
ns
Reverse Recovery Charge
QRR
IF=8A, dI/dt=100A/µs
18.3
nC



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