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UD4606G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UD4606G-S08-R
功能描述  DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL)
PDF  9 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UD4606G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies

  UD4606G-S08-R Datasheet HTML 1Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 2Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 3Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 4Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 5Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 6Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 7Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 8Page - Unisonic Technologies UD4606G-S08-R Datasheet HTML 9Page - Unisonic Technologies  
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UD4606
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 9
www.unisonic.com.tw
QW-R502-144.C
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
1.9
3
V
VGS=10V, ID=6.9A
22.5
28
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=5A
34.5
42
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
680
pF
Output Capacitance
COSS
102
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=15V,f=1.0MHz
77
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
4.6
ns
Turn-ON Rise Time
tR
4.1
ns
Turn-OFF Delay Time
tD(OFF)
20.6
ns
Turn-OFF Fall Time
tF
VDS=15V, VGS=10V, RG=3Ω,
RL=2.2Ω
5.2
ns
Total Gate Charge (Note2)
QG
13.8
nC
Gate-Source Charge
QGS
1.82
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=6.9A
3.2
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
0.76
1
V
Diode Continuous Forward Current (Note3)
IS
3
A
Reverse Recovery Time
tRR
16.5
ns
Reverse Recovery Charge
QRR
IDS=6.9A, dI/dt=100A/μs
7.8
nC
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1.2
-2
-2.4
V
VGS=-10V, ID=-6A
28
35
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=-4.5V, ID=-5A
44
58
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
920
pF
Output Capacitance
COSS
190
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=-15V,f=1.0MHz
122
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
7.7
ns
Turn-ON Rise Time
tR
5.7
ns
Turn-OFF Delay Time
tD(OFF)
20.2
ns
Turn-OFF Fall Time
tF
VDS=-15V, VGS=-10V,
RG=3Ω, RL=2.7Ω
9.5
ns
Total Gate Charge (Note2)
QG
18.5
nC
Gate-Source Charge
QGS
2.7
nC
Gate-Drain Charge
QGD
VDS=-15V, VGS=-10V,
ID=-6A
4.5
nC



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