UF601

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-699.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (Note 2)

600

V

Drain-Gate Voltage (Note 2)

600

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

0.185

A

Pulsed

0.740

A

Power Dissipation

0.50

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

250

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

600

V

Drain-Source Leakage Current

0.1

μA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-2.7

-1.5

V

Drain-Source Leakage Current

7.0

mA

Static Drain-Source On-State Resistance

600 700

Ω

DYNAMIC PARAMETERS

Input Capacitance

f=1.0MHz

9.44

pF

Output Capacitance

2.28

pF

Reverse Transfer Capacitance

1.42

pF

SWITCHING PARAMETERS

Total Gate Charge

1.29

nC

Gate to Source Charge

0.1

nC

Gate to Drain Charge

0.47

nC

Turn-ON Delay Time

4

ns

Rise Time

9

ns

Turn-OFF Delay Time

14

ns

Fall-Time

84

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.4

V

Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature.

2. Pulse width≤380μs; duty cycle≤2%.