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UF630L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UF630L-TN3-R
功能描述  200V, 9A N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UF630L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies

  UF630L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UF630L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UF630L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UF630L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UF630L-TN3-R Datasheet HTML 5Page - Unisonic Technologies UF630L-TN3-R Datasheet HTML 6Page - Unisonic Technologies UF630L-TN3-R Datasheet HTML 7Page - Unisonic Technologies  
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UF630
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R502-049,F
ELECTRICAL SPECIFICATIONS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
200
V
On-State Drain Current (Note 1)
ID(ON)
VDS > ID(ON) x RDS(ON)MAX,
VGS = 10V
9
A
Drain-Source Leakage Current
IDSS
VDS = Rated BVDSS, VGS = 0V
10
μA
Forward
VGS = 20V, VDS = 0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -20V, VDS = 0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250μA
2
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5A
0.25
0.4
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
600
pF
Output Capacitance
COSS
250
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
80
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
30
ns
Turn-On Rise Time
tR
50
ns
Turn-Off Delay Time
tD(OFF)
50
ns
Turn-Off Fall Time
tF
VDD = 90V, ID≈9A, RGS = 9.1Ω,
VGS = 10V, RL = 9.6Ω
(Note 1, 2)
40
ns
Total Gate Charge
QG
19
30
nC
Gate-Source Charge
QGS
10
nC
Gate-Drain Charge
QGD
VGS = 10V, ID = 9A,
VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA
9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS = 9.0A
2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
9
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
36
A
Reverse Recovery Time
trr
450
ns
Reverse Recovery Charge
QRR
IS = 9.0A, dIS/dt = 100A/μs
(Note 1)
3
μC
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
Notes: 2. Essentially independent of operating temperature



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