UF840

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-047,F

PARAMETER

SYMBOL

RATINGS

UNIT

500

V

500

V

Gate to Source Voltage

±30

V

Drain Current

Continuous

8.0

A

Pulsed

32

A

TO-220

134

W

TO-220F/TO-220F1

44

TO-220F2

46

TO-263

134

Single Pulse Avalanche Energy

510

mJ

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220

0.93

°C/W

TO-220F/TO-220F1

2.86

TO-220F2

2.72

TO-263

0.93

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Drain-Source Breakdown Voltage

500

V

Gate Threshold Voltage

2

4

V

On-State Drain Current (Note 1)

8

A

Drain-Source Leakage Current

25

μA

250

µA

Gate-Source Leakage Current

±100 nA

Static Drain-Source On-State

Resistance (Note 1)

0.8

0.85

Ω

Turn-On Delay Time

(Note 2)

15

21

ns

Turn-Off Delay Time

50

74

ns

Turn-On Rise Time

21

35

ns

Turn-Off Fall Time

20

30

ns

Total Gate Charge

42

63

nC

Gate-Source Charge

7

nC

Gate-Drain Charge

22

nC

Input Capacitance

1225

pF

Output Capacitance

200

pF

Reverse Transfer Capacitance

85

pF

Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.