UF830

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-046,G

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Total Gate Charge

22

32

nC

Gate-Source Charge

3.5

nC

Gate-Drain Charge

11

nC

Input Capacitance

600

pF

Output Capacitance

100

pF

Reverse Transfer Capacitance

20

pF

Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.

INTERNAL PACKAGE INDUCTANCE

PARAMETER

SYMBOL

MIN

TYP MAX UNIT

Internal Drain Inductance

Measured from the contact screw on tab to center of die

3.5

nH

Measured from the drain lead(6mm from package) to center of die

4.5

nH

Internal Source Inductance

Measured from the source lead(6mm from header) to source bond pad

7.5

nH

Remark:

Modified MOSFET symbol showing the internal devices inductances as below.

SOURCE TO DRAIN DIODE SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Source to Drain Diode Voltage

1.6

V

Continuous Source to Drain Current

Note 2

5.5

A

Pulse Source to Drain Current

18

A

Reverse Recovery Time

180

350

760

ns

Reverse Recovery Charge

0.96

2.2

4.3

μC

NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.

G

S

D