UM6K31N

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-503.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous

±250

mA

Drain Current Continuous

Pulsed (Note1)

±1

A

Continuous

125

mA

Source Current Continuous (Body Diode)

Pulsed (Note1)

1

A

Power Dissipation

150

mW

Channel Temperature

150

°C

Strage Temperature

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCE

PARAMETER

SYMBOL

RATINGS

UNIT

Channel to Ambient

833

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

2.5

V

1.7

2.4

2.1

3.0

2.3

3.2

Static Drain-Source On-State

Resistance

(Note1)

3.0 12.0

Ω

DYNAMIC PARAMETERS

Input Capacitance

15

pF

Output Capacitance

4.5

pF

Reverse Transfer Capacitance

2.0

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

(Note1)

3.5

ns

Rise Time

(Note1)

5

ns

Turn-OFF Delay Time

(Note1)

18

ns

Fall-Time

(Note1)

See Fig 1-1.1-2

28

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note1)

1.2

V

Forward Transfer Admittance

(Note1)

0.25

S

Note1: PW≤10μs DUTY CYCLE≤1%