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UN1518L-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UN1518L-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UN1518 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-088.C ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Pulse (Note 2) ICM 6 A Collector Current DC IC 2.5 A Base Current IB 500 mA Total Device Dissipation PD 625 mW Storage Temperature TSTG -50 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width=300ms. Duty cycle ≤2% ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA 20 100 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA (Note) 20 27 V Emitter-Base Breakdown Voltage BVEBO IE=100µA 5 8.3 V Collector Cut-Off Current ICBO VCB=16V 100 nA Emitter Cut-Off Current IEBO VEB=4V 100 nA Collector Emitter Cut-Off Current ICES VCES=16V 100 nA IC=0.1A, IB=10mA 10 15 mV IC=1A, IB=10mA 70 150 Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=2.5A, IB=50mA 130 200 Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=2.5A, IB=50mA 0.89 1.0 V Base-Emitter Turn-On Voltage (Note) VBE(ON) VCE=2V, IC=2.5A 0.79 1.0 V VCE=2V, IC=10mA 200 400 VCE=2V, IC=200mA 300 450 VCE=2V, IC=2A 200 360 DC Current Gain (Note) hFE VCE=2V, IC=6A 100 180 Transition Frequency fT VCE=10V, IC=50mA, f=100MHz 100 140 MHz Output Capacitance COB VCB=10V, f=1MHz 23 30 pF Turn-On Time t(ON) 170 nS Turn-Off Time t(OFF) VCC=10V, IC=1A IB1=-IB2=10mA 400 nS Note: Pulse width=300ms. Duty cycle ≤2% |
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