UP9T15GL-TN3-R datasheet(1/5 Pages) UTC

部件名	UP9T15GL-TN3-R

功能描述	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 5 page

UNISONIC TECHNOLOGIES CO., LTD

UP9T15G

Power MOSFET

www.unisonic.com.tw

1 of 5

QW-R502-208.A

N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

DESCRIPTION

The UP9T15GL uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* VDS(V)=20V

* ID=12 .5A (VGS=4.5V)

* RDS(ON)<50mΩ@ VGS =4.5 V, ID =6 A

* RDS(ON)<80mΩ@ VGS =2.5 V, ID =5.2 A

SYMBOL

1.Gate

3.Source

2.Drain

*Pb-free plating product number: UP9T15GL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free Plating

Package

1

2

3

Packing

UP9T15G-TN3-R

UP9T15GL-TN3-R

TO-252

G

D

S

Tape Reel

UP9T15G-TN3-T

UP9T15GL-TN3-T

TO-252

G

D

S

Tube

类似零件编号 - UP9T15GL-TN3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UP9T15GL-TN3-R	348Kb / 5P	N-CHANNEL ENHANCEMENT MODE MOSFET
SHENZHEN DOINGTER SEMIC...	UP9T15GL-TN3-R	965Kb / 5P	N-Channel MOSFET uses advanced trench technology

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