UPC8026L-S08-R datasheet(3/4 Pages) UTC

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UPC8026

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-600.a

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain-Gate Voltage (RGS=20kΩ)

VDGR

Continuous (Note 2)

Drain Current

Pulsed (Note 2)

IDM

Avalanche Current

IAR

Single Pulsed (Note 4)

EAS

Avalanche Energy

Repetitive (Note 3, 5)

EAR

0.048

Power Dissipation (Nota 3)

1.9

Channel Temperature

TCH

150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Ensure that the channel temperature does not exceed 150°C.

3. Device mounted on a glass-epoxy board FR-4,25.4×25.4×0.8(unit: mm)

4. VDD=24V, TCH =25°C (initial), L=0.2mH, IAR = 13A

5. Repetitive rating: pulse width limited by max channel temperature

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Nota 3)

θJA

65.8

°C/W

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