UPC8026

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 4

www.unisonic.com.tw

QW-R502-600.a

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

30

Drain-Source Breakdown Voltage

10

V

Drain-Source Leakage Current

10

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.3

2.5

V

7.5

10

Static Drain-Source On-State Resistance

5.1

6.6

mΩ

Forward Transfer Admittance

15

30

S

DYNAMIC PARAMETERS

Input Capacitance

1800

pF

Output Capacitance

570

pF

Reverse Transfer Capacitance

370

pF

SWITCHING PARAMETERS

Total Gate Charge

42

nC

Gate to Source Charge

6.5

nC

Gate to Drain Charge

14

nC

Turn-ON Delay Time

28

ns

Rise Time

15

ns

Turn-OFF Delay Time

54

ns

Fall-Time

21

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain Reverse Current

Pulse (Note 1)

52

A

Forward Voltage (Diode)

-1.2

V

Note:

1. Ensure that the channel temperature does not exceed 150°C.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.