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US202XG-AF5-R 数据表(PDF) 3 Page - Unisonic Technologies |
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US202XG-AF5-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() US202 Preliminary CMOS IC UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-445.c ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Supply Voltage VIN 7 V Chip Enable VEN -0.3~7 V Power Dissipation (TA = 25°C) PD 0.25 W Junction Temperature TJ -20~100 °C Storage Temperature TSTG -65~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (VIN = 5V, CIN = COUT = 1μF, TA = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage Range VIN 2.2 6 V Output NMOSFET RDS(ON) RDS(ON) IL = 1A 85 100 mΩ Supply Current VIN= 3V 19 40 µA VIN= 5V 23 45 Output Turn-On Rising Time TR RL= 10Ω, 90% Settling 400 µS Current Limit Threshold ILIMIT 1.1 1.5 2 A Short-Circuit Fold Back Current IOS VOUT = 0V, measured prior to thermal shutdown 1.0 A CE Input High Threshold VIH 2.0 V CE Input Low Threshold VIL 0.8 V Shutdown Supply Current IOFF CE = “0” 0.1 1 µA Output Leakage Current II(LEAK) CE = “0”, VOUT = 0V 0.5 10 µA VIN Under Voltage Lockout UVLO 1.3 1.8 V VIN Under Voltage Hysteresis 100 mV Thermal Limit TSD 130 °C Thermal Limit Hysteresis ∆TSD 20 °C |
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