C6084

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-039.G

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

TO-220/TO-220F/TO-3P/ TO-263

1.5

KV

TO-126

1.4

Collector-Emitter Voltage

800

V

Emitter-Base Voltage

5

V

Collector Current

TO-220/TO-220F/TO-3P/ TO-263

5

A

TO-126

3

TO-220/TO-220F/TO-3P/ TO-263

12

A

TO-126

6

Collector Dissipation

TO-220/ TO-263

1.75

W

TO-220F

1.35

TO-126

1.25

TO-3P

3.125

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Cutoff Current

10

µA

Collector Cutoff Current

1.0

mA

Collector Sustain Voltage

800

V

Emitter Cutoff Current

1.0

mA

Collector-Emitter

Saturation Voltage

TO-220/TO-220F/

TO-263/TO-3P

3

V

TO-126

3

Base-Emitter

Saturation Voltage

TO-220/ TO-220F/

TO-263/TO-3P

1.5

V

TO-126

1.5

DC Current Gain

10

25

TO-220/TO-220F/

TO-263/TO-3P

5

8

TO-126

5

8

Fall Time

0.2

µS

RANK

A

B

C

RANGE

10 ~ 15

15 ~ 20

20 ~ 25