UT3P01Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-341.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±10

V

DC

-0.1

A

Drain Current

Pulse(Note 2)

-0.4

A

SOT-523

150

mW

Power Dissipation

SOT-323 / SOT-23-3

200

mW

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≤10μs, Duty cycle≤1%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Cutoff Threshold Voltage

-0.4

-1.4

V

8

10.4

Ω

11

15.4

Ω

Static Drain-Source On-Resistance

27

54

Ω

Forward Transconductance

80

110

mS

DYNAMIC PARAMETERS

Input Capacitance

7.5

pF

Output Capacitance

5.7

pF

Reverse Transfer Capacitance

1.8

pF

SWITCHING PARAMETERS

Total Gate Charge

1.43

nC

Gate Source Charge

0.18

nC

Gate Drain Charge

0.25

nC

Turn-ON Delay Time

24

ns

Turn-ON Rise Time

55

ns

Turn-OFF Delay Time

120

ns

Turn-OFF Fall-Time

See specified Test Circuit

130

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

-0.83

-1.2

V