UT12N10G-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UT12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-508.b

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

100

Drain-Source Leakage Current

IDSS

VDS=100V, VGS=0V

µA

Forward

VGS=+20V, VDS=0V

+100 nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=6A

150 180 mΩ

Forward Transconductance

gFS

VDS=10V, ID=6A

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

CISS

430

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

(Note 2)

Total Gate Charge

Gate to Source Charge

QGS

1.5

Gate to Drain Charge

QGD

VGS=10V, VDS=80V, ID=12A

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

VDD=80V, ID=12A, VGS=10V,

RG=9.1Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Drain-Source Diode Forward Voltage

(Note 1)

VSD

IS=12A, VGS=0V

1.2

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Guaranteed by design, not subject to production testing.

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