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UT20N03-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT20N03-TN3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT20N03-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UT20N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-139.B
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
20
Pulsed Drain Current (Note 1)
IDM
120
A
Single Pulsed (Note 2)
EAS
15
Avalanche Energy
Repetitive (Note 1)
EAR
6
mJ
Peak Diode Recovery (Note 3)
dv/dt
6
KV/µs
Power Dissipation
PD
60
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
100
℃
/W
Junction-to-Case
θJC
1.7
2.5
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =30V,VGS =0V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =25 µA
1.2
1.6
2
V
VGS=4.5V, ID =15A
22.9
31
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID =15A
15.5
20
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
530
700
Output Capacitance
COSS
200
275
Reverse Transfer Capacitance
CRSS
VDS =25 V, VGS =0V, f=1MHz
60
90
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
6.2
9.3
Turn-On Rise Time
tR
11
17
Turn-Off Delay Time
tD(OFF)
23
24
Turn-Off Fall-Time
tF
VGS=10V,VDD=15V, RG=12.7Ω,
ID=15A
18
27
ns
Gate-Source Charge
QGS
2.5
3.1
Gate-Drain Charge
QGD
VDD=15V,ID=15A
6.4
9.6
Gate Charge Total
QG
VDD=15V,ID=15A, VGS=0~5V
8.4
11
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V,IF=30A
1.1
1.4
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
30
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
120
A
Reverse Recovery Time
tRR
15
18
ns
Reverse Recovery Charge
QRR
VR=15V,IF=IS, dIF/dt=100A/µs
2
3
nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. ID = 15A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. IS=30A, VDS=24V, di/dt=200A/μs, TJ(MAX)=175℃
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature



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