UT30P03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-335.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-26

A

Power Dissipation

50

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

50

°C/W

Junction to Case

3

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

μA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

30

40

mΩ

Static Drain-Source On-State Resistance

(Note)

40

60

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

700

pF

Output Capacitance

130

pF

Reverse Transfer Capacitance

120

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

25

ns

Turn-On Rise Time

50

ns

Turn-Off Delay Time

380

ns

Turn-Off Fall Time

180

ns

Total Gate Charge

100

nC

Gate-Source Charge

15

nC

Gate-Drain Charge

10

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

-1.2

V

Maximum Continuous Drain-Source Diode

Forward Current

-26

A

Note: Pulse Test: Pulse width≤300μs, Duty cycle≤2%