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UT40N03G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT40N03G-TN3-R
功能描述  40 Amps, 30 Volts N-CHANNEL POWER MOSFET
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT40N03G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UT40N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-160.C
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
40
A
Pulsed Drain Current (Note 1)
IDM
169
A
TO-251
50
W
Total Power Dissipation
TO-252
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-251
62
℃
/W
Junction to Ambient
TO-252
θJA
62
℃
/W
TO-251
2.5
℃
/W
Junction to Case
TO-252
θJC
2.5
℃
/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS =30 V, VGS =0 V, TJ=25℃
1
µA
Gate- Source Leakage Current
IGSS
VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
3
V
VGS =10 V, ID =20 A
14
17
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5 V, ID =16 A
20
23
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
800
Output Capacitance
COSS
380
Reverse Transfer Capacitance
CRSS
VDS =25 V, VGS =0V, f=1.0MHz
133
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
7.2
Turn-ON Rise Time
tR
60
Turn-OFF Delay Time
tD(OFF)
22.5
Turn-OFF Fall-Time
tF
VDS =15 V, ID=20 A, VGS =10V,
RG =3.3 Ω, RL =0.75 Ω
10
ns
Total Gate Charge
QG
17
Gate-Source Charge
QGS
3
Gate-Drain Charge
QGD
VDS =24V,VGS =5 V,ID =20 A
10
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
TJ=25 , I
℃ S=40A, VGS=0V
1.3
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
VD=VG=0V , VS=1.3V
40
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
169
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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