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TCS3210 数据表(PDF) 4 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

部件名 TCS3210
功能描述  COLOR LIGHT-TO-FREQUENCY CONVERTER
PDF  14 Pages
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制造商  TAOS [TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS]
网页  http://www.taosinc.com
标志 TAOS - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

TCS3210 数据表(HTML) 4 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

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TCS3200, TCS3210
PROGRAMMABLE
COLOR LIGHT-TO-FREQUENCY CONVERTER
TAOS099A − AUGUST 2011
4
r
r
Copyright
E 2011, TAOS Inc.
The LUMENOLOGY
r Company
www.taosinc.com
Operating Characteristics at VDD = 5 V, TA = 25°C, S0 = H, S1 = H (unless otherwise noted)
(See Notes 5, 6, 7, and 8). Values for TCS3200 (TCS3210) are below.
PARAMETER
TEST
CONDITIONS
CLEAR
PHOTODIODE
S2 = H, S3 = L
BLUE
PHOTODIODE
S2 = L, S3 = H
GREEN
PHOTODIODE
S2 = H, S3 = H
RED
PHOTODIODE
S2 = L, S3 = L
UNIT
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
Ee = 47.2 μW/cm2,
12.5
15.6
18.7
61%
84%
22%
43%
0%
6%
Ee = 47.2 μW/cm2,
λp = 470 nm
(4.7)
(5.85)
(7)
61%
84%
22%
43%
0%
6%
f
Output
frequency
Ee = 40.4 μW/cm2,
12.5
15.6
18.7
8%
28%
57%
80%
9%
27%
kHz
fO
frequency
(Note 9)
Ee = 40.4 μW/cm2,
λp = 524 nm
(4.7)
(5.85)
(7)
8%
28%
57%
80%
9%
27%
kHz
(Note 9)
Ee = 34.6 μW/cm2,
13.1
16.4
19.7
5%
21%
0%
12%
84%
105%
Ee = 34.6 μW/cm2,
λp = 640 nm
(4.9)
(6.15)
(7.4)
5%
21%
0%
12%
84%
105%
λ
470 nm
331
61%
84%
22%
43%
0%
6%
λp = 470 nm
(124)
61%
84%
22%
43%
0%
6%
R
Irradiance
responsivity
λ
524 nm
386
8%
28%
57%
80%
9%
27%
Hz/
( W/
Re responsivity
(Note 10)
λp = 524 nm
(145)
8%
28%
57%
80%
9%
27%
(
μW/
cm2)
(Note 10)
λ
640 nm
474
5%
21%
0%
12%
84%
105%
cm2)
λp = 640 nm
(178)
5%
21%
0%
12%
84%
105%
λ
470 nm
1813
λp = 470 nm
(4839)
−−
−−
−−
Saturation
irradiance
λ
524 nm
1554
μW/
irradiance
(Note 11)
λp = 524 nm
(4138)
−−
−−
−−
μW/
cm2
(Note 11)
λ
640 nm
1266
λp = 640 nm
(3371)
−−
−−
−−
fD
Dark
frequency
Ee = 0
2
10
2
10
2
10
2
10
Hz
fO = 0 to 5 kHz
±0.1
±0.1
±0.1
±0.1
Nonlinearity
(Note 12)
fO = 0 to 50 kHz
±0.2
±0.2
±0.2
±0.2
% F.S.
(Note 12)
fO = 0 to 500 kHz
±0.5
±0.5
±0.5
±0.5
% F.S.
Recovery
from power
down
100
100
100
100
μs
Response
time to out-
put enable
(OE)
100
100
100
100
ns
NOTES: 5. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
6. The 470 nm input irradiance is supplied by an
InGaN light-emitting diode with the following characteristics:
peak wavelength
λp = 470 nm, spectral halfwidth Δλ½ = 35 nm, and luminous efficacy = 75 lm/W.
7. The 524 nm input irradiance is supplied by an
InGaN light-emitting diode with the following characteristics:
peak wavelength
λp = 524 nm, spectral halfwidth Δλ½ = 47 nm, and luminous efficacy = 520 lm/W.
8. The 640 nm input irradiance is supplied by a Al
InGaP light-emitting diode with the following characteristics:
peak wavelength
λp = 640 nm, spectral halfwidth Δλ½ = 17 nm, and luminous efficacy = 155 lm/W.
9. Output frequency Blue, Green, Red percentage represents the ratio of the respective color to the Clear channel absolute value.
10. Irradiance responsivity Re is characterized over the range from zero to 5 kHz.
11. Saturation irradiance = (full-scale frequency)/(irradiance responsivity) for the Clear reference channel.
12. Nonlinearity is defined as the deviation of fO from a straight line between zero and full scale, expressed as a percent of full scale.



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