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UT50N03G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UT50N03G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UT50N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-168.B ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 45 A Pulsed Drain Current (Note 3) IDM 180 A Single Pulsed Avalanche Energy (Note 4) EAS 20 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 19.5mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 3) θJA 71.4 ℃ /W Junction to Case θJC 3.0 ℃ /W |
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