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UT60N03G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UT60N03G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page ![]() UT60N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-237.D ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (VGS=10V) ID 60 A TO-220 60 Power Dissipation TO-251/TO-252 45 W TO-220 0.4 Derate above 25°C TO-251/TO-252 PD 0.37 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 Junction to Ambient TO-251/TO-252 θJA 100 °C/W TO-220 2.5 Junction to Case TO-251/TO-252 θJC 2.73 °C/W |
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