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UT70N03L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT70N03L-TN3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT70N03L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT70N03L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UT70N03L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UT70N03L-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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UT70N03
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-269.c
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
60
A
Pulsed Drain Current
IDM
195
A
Power Dissipation
PD
53
W
Linear Derating Factor
0.36
W/°C
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
/W
℃
Junction to Case
θJC
2.8
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=33A
9
mΩ
VGS=4.5V, ID =20A
18
Forward Transconductance
gFS
VDS=10V, ID=33A
35
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V,
f=1.0MHz
1485
pF
Output Capacitance
COSS
245
pF
Reverse Transfer Capacitance
CRSS
170
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=20V, VGS=4.5V,
ID=33A
16.5
nC
Gate Source Charge
QGS
5
nC
Gate Drain Charge
QGD
10.3
nC
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=15V, ID=33A,
RD=0.45Ω, RG=3.3Ω
8.2
ns
Turn-ON Rise Time
tR
105
ns
Turn-OFF Delay Time
tD(OFF)
21.4
ns
Turn-OFF Fall-Time
tF
8.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD
IS=60A, VGS=0V
1.3
V
Maximum Body-Diode Continuous Current
IS
VD=VG=0V, VS=1.3V
60
A
Pulsed Source Current (Body Diode)
ISM
(Note 1)
195
A
Note :1. Pulse width limited by safe operating area.
Note :2. Pulse width < 300us, duty cycle < 2%.



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