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UT136EG-X-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UT136EG-X-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UT136E Preliminary TRIAC UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-017, F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltages UT136E-5 VDRM 500 (Note 2) V UT136E-6 600 (Note 2) V UT136E-8 800 V RMS On-State Current (full sine wave, TMB ≤107°C) IT(RMS) 4 A Non-Repetitive Peak On-State Current (Full sine wave; TJ=25°C prior to surge) t =20ms ITSM 25 A t =16.7ms 27 A I 2t for fusing (t =10ms) I 2t 3.1 A 2s Repetitive Rate of Rise of On-State Current After Triggering ITM=6A, IG=0.2A, dIG/dt=0.2A/μs T2+ G+ dIT/dt 50 A/μs T2+ G- 50 A/μs T2- G- 50 A/μs T2- G+ 10 A/μs Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (over any 20 ms period) PG(AV) 0.5 W Junction Temperature TJ 125 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/μs. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient Pcb Mounted TO-220 θJA 60 K/W TO-252 75 Junction to Mounting Base Full Cycle θJB 3.0 K/W Half Cycle 3.7 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Gate Trigger Current IGT VD=12V, IT=0.1A T2+ G+ 2.5 10 mA T2+ G- 4.0 10 mA T2- G- 5.0 10 mA T2- G+ 11 25 mA Latching Current IL VD=12V, IGT=0.1A T2+ G+ 3.0 15 mA T2+ G- 10 20 mA T2- G- 2.5 15 mA T2- G+ 4.0 20 mA Holding Current IH VD=12V, IGT=0.1A 2.2 15 mA On-State Voltage VT IT=5A 1.4 1.7 V Gate Trigger Voltage VGT VD=12V, IT=0.1A 0.7 1.5 V VD=400V, IT=0.1A, TJ=125°C 0.25 0.4 V Off-State Leakage Current ID VD=VDRM(MAX), TJ=125°C 0.1 0.5 mA DYNAMIC Critical Rate of Rise of Off-State Voltage dVD/dt VDM=67%VDRM(max), TJ=125°C, exponential waveform; gate open circuit 50 V/μs Gate Controlled Turn-On Time tGT ITM=6A, VD=VDRM(MAX), IG=0.1A, dIG/dt=5A/μs 2 μs |
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