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UT2301G-AE2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2301G-AE2-R
功能描述  2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2301G-AE2-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2301G-AE2-R Datasheet HTML 1Page - Unisonic Technologies UT2301G-AE2-R Datasheet HTML 2Page - Unisonic Technologies UT2301G-AE2-R Datasheet HTML 3Page - Unisonic Technologies UT2301G-AE2-R Datasheet HTML 4Page - Unisonic Technologies  
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UT2301
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-118.G
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
-2.8
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation
PD
1.14
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
110
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-20
V
Drain-Source Leakage Current
IDSS
VDS=-16V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.45
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=-4.5V, ID=-2.8A
95
130
mΩ
VGS=-2.5V, ID=-2.0A
122
190
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-6V, f=1.0MHz
447
pF
Output Capacitance
COSS
127
pF
Reverse Transfer Capacitance
CRSS
80
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=-6V, VGS=-4.5V,
ID=-1A, RG=6Ω, RL=6Ω
5
25
ns
Turn-ON Rise Time
tR
19
60
ns
Turn-OFF Delay Time
tD(OFF)
95
110
ns
Turn-OFF Fall Time
tF
65
80
ns
Total Gate Charge (Note 2)
QG
VDS=-6V, VGS=-4.5V,
ID=-2.8A
5.4
10
nC
Gate-Source Charge
QGS
0.8
nC
Gate-Drain Charge
QGD
1.1
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
VGS=0V, IS=-1.6A
-0.8
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-1.6
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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