UT2301Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-281.G

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

-2.8

A

Pulsed Drain Current (Note 2, 3)

-10

A

Total Power Dissipation

1.25

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Note:

3. Pulse width ≤300µs, duty cycle ≤2%

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

100

°C/W

Note: Surface mounted on FR4 board t ≤ 5%sec.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-20

V

Zero Gate Voltage Drain Current

-1.0

μA

Gate-Source Leakage Current

±5

μA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.45

V

95

130

mΩ

Static Drain-Source On-State Resistance

122

190

mΩ

On-State Drain Current

-6

A

Forward Tran conductance

6.5

S

DYNAMIC CHARACTERISTICS

Input Capacitance

447

pF

Output Capacitance

127

pF

Reverse Transfer Capacitance

80

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note)

5.4

10

nC

Gate-Source Charge

0.8

nC

Gate-Drain Charge

1.1

nC

Turn-ON Delay Time (Note)

5

25

ns

Turn-ON Rise Time

19

60

ns

Turn-OFF Delay Time

95

110

ns

Turn-OFF Fall Time

65

80

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage (Note)

-0.8

-1.2

V

Maximum Diode Forward Current

-1.6

A

Note: Pulse width ≤300µs, Duty Cycle ≤2%