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UT2302G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2302G-AE3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2302G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2302G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2302G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2302G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2302G-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT2302G-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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UT2302
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-114.G
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous
ID
2.4
A
Drain Current (Note 1)
Pulsed
IDM
10
A
Power Dissipation
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
100
°C/W
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
20
V
Drain-Source Leakage Current
IDSS
VDS =20 V, VGS =0 V
1.0
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±8V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
0.45
V
VGS =4.5 V, ID =7.2 A
50
mΩ
Static Drain-Source On-State Resistance
RDS(ON)
VGS =2.5 V, ID =3.1 A
75
95
mΩ
On State Drain Current (Note2)
ID(ON)
VDS ≥ 5V, VGS =4.5 V
6
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
450
pF
Output Capacitance
COSS
70
pF
Reverse Transfer Capacitance
CRSS
VDS =10 V, VGS =0V, f=1MHz
43
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
7
15
ns
Turn-ON Rise Time
tR
55
80
ns
Turn-OFF Delay Time
tD(OFF)
16
60
ns
Turn-OFF Fall-Time
tF
VDD =10V, R =10 Ω, ID=1A,
VGEN =4.5V, RG =6Ω
10
25
ns
Total Gate Charge
QG
5.2
10
nC
Gate-Source Charge
QGS
0.65
nC
Gate-Drain Charge
QGD
VDS =10V, VGS =4.5 V, ID=3.6 A
1.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS =0 V, IS =1.0 A
0.76
1.2
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
1.6
A
Note:1. Repetitive Rating: Pulse width limited by TJ
2. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
3. Surface mounted on 1 in
2 copper pad of FR4 board



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