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UT2304L-AE3-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UT2304L-AE3-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() UT2304 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R502-150.D TYPICAL CHARACTERISTICS(Cont.) VDS=25V VDS=20V VDS=15V ID=2.5A 12 10 8 6 4 2 0 01 2 3 4 5 6 Total Gate Charge, QG (nC) Gate Charge Characteristics Typical Capacitance Characteristics Drain-to-Source Voltage,VDS (V) CISS COSS CRSS f=1.0MHZ 1000 100 10 15 9 13 17 21 25 29 0.1 1 0.1 Drain-to-Source Voltage,VDS (V) Maximum Safe Operating Area 100 1 0.01 100 0.0001 Pulse Width, t (s) Effective Transient Thermal Impedance 1000 0.01 1 10 0.001 0.01 0.1 1 10 10 1ms TA =25°C Single Pulse 10ms 100ms 1s DC 100 0.001 0.1 PDM T t Duty factor = t/T Peak TJ = PDM x RthJA + TA RthJA = 270℃/W D=0.5 0.2 0.1 0.05 0.01 Single Pulse |
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