UT2309

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-148.E

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

-3.7

A

Pulsed Drain Current (Note 1, 2)

-12

A

Total Power Dissipation

1.38

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 3)

90

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-0.5

uA

Gate-Source Leakage Current

5

nA

Breakdown Voltage Temperature Coefficient

-0.02

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Static Drain-Source On-Resistance (Note 2)

75

mΩ

120

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

412 660

pF

Output Capacitance

91

pF

Reverse Transfer Capacitance

62

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

8

ns

Turn-ON Rise Time

5

ns

Turn-OFF Delay Time

20

ns

Turn-OFF Fall Time

7

ns

Total Gate Charge (Note 2)

5

8

nC

Gate-Source Charge

1

nC

Gate-Drain Charge

3

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage

-0.76 -1.2

V

Reverse Recovery Time

dI/dt=-100A/μs

20

ns

Reverse Recovery Charge

15

nC

2. Pulse width ≤300us , duty cycle ≤2%.

3. Surface mounted on 1 in