UT2309A

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-148.A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

-3.7

A

Pulsed Drain Current (Note 1, 2)

-12

A

Total Power Dissipation

1.38

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

90

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-0.5

uA

Gate-Source Leakage Current

5

nA

-0.02

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

65

mΩ

Static Drain-Source On-Resistance (Note 2)

85

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

412

660

Output Capacitance

91

Reverse Transfer Capacitance

62

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

8

Turn-ON Rise Time

5

Turn-OFF Delay Time

20

Turn-OFF Fall Time

7

ns

Total Gate Charge (Note 2)

5

8

Gate-Source Charge

1

Gate-Drain Charge

3

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage

-0.76 -1.2

V

Reverse Recovery Time

20

ns

Reverse Recovery Charge

dI/dt=-100A/µs

15

nC

2.Pulse width ≤300us , duty cycle ≤2%.

3.Surface mounted on 1 in