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UT2316G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2316G-AE3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2316G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2316G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2316G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2316G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2316G-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UT2316
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-126.B
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note 3)
ID
3.6
A
Pulsed Drain Current (Note 1, 2)
IDM
16
A
Total Power Dissipation (Ta=25℃)
PD
0.96
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
175
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
μA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
0.8
V
VDS = 4.5V, VGS = 10V
6
A
On-State Drain Current
ID(ON)
VDS = 4.5V, VGS = 4.5V
4
A
VGS=10V, ID=3.4A
42
50
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=4.5V, ID=2.6A
68
85
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
215
pF
Output Capacitance
COSS
90
pF
Reverse Transfer Capacitance
CRSS
VDS=15V,VGS=0V, f=1.0MHz
55
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time
tD(ON)
9
15
ns
Turn-ON Rise Time
tR
9
15
ns
Turn-OFF Delay Time
tD(OFF)
14
20
ns
Turn-OFF Fall Time
tF
VDD=15V, VGS=10V, ID≒1A,
RG=6Ω, RL=15Ω
6
12
ns
Total Gate Charge
QG
4.3
7
nC
Gate-Source Charge
QGS
0.65
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=3.6A
1.2
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=0.8A
0.88
1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V, VS=1.2V
0.8
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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