UT2321

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-249.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 2)

-3.8

A

Pulsed Drain Current (Note 2)

-15.2

A

Power Dissipation

1.25

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

100

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-20

V

Drain-Source Leakage Current

-1

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

(Note)

Gate-Threshold Voltage

-0.4

-1.0

V

45

55

mΩ

Static Drain-Source On-Resistance

65

80

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1500

pF

Output Capacitance

270

pF

Reverse Transfer Capacitance

185

pF

SWITCHING PARAMETERS

Total Gate Charge

14.8

19

nC

Gate-Source Charge

2.8

nC

Gate-Drain Charge

4.4

nC

Turn-ON Delay Time

13

24

ns

Turn-ON Rise Time

8

24

ns

Turn-OFF Delay Time

65

256

ns

Turn-OFF Fall-Time

29

72

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Diode Forward Voltage(Note)

-1.2

V

Maximum Body-Diode Continuous

Current

-0.42

A

Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.