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UT2352L-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2352L-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2352L-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2352L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2352L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2352L-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2352L-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT2352L-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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UT2352
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-157.C
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current
ID
-1.3
A
Pulsed Drain Current
IDM
-10
A
Power Dissipation (Note 3)
PD
0.46
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction-to-Ambient (Note 3)
θJA
250
°C/W
Junction-to-Case
θJC
75
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VGS=±25V, VDS=0V
±100
nA
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ Reference to 25℃, ID=-250uA
-17
mV/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.8
-2.0
-2.5
V
VGS=-10V, ID=-1.3A
150
180
mΩ
Drain-Source On-State Resistance (Note
2)
RDS(ON)
VGS=-4.5V, ID=-1.1A
250
300
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
150
pF
Output Capacitance
COSS
40
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-15V, f=1MHz
20
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
4
8
ns
Turn-ON Rise Time
tR
15
28
ns
Turn-OFF Delay Time
tD(OFF)
10
18
ns
Turn-OFF Fall Time
tF
VDD=-10V, VGS=-10V, ID=-1A,
RG=6Ω
1
2
ns
Total Gate Charge
QG
1.4
1.9
nC
Gate-Source Charge
QGS
0.5
nC
Gate-Drain Charge
QGD
VDS=-10V, VGS=-4.5V,
ID=-0.9A
0.5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
VGS=0V, IS=-0.42 A
-0.8
-1.2
V
Maximum Continuous Drain Source Diode
Forward Current
IS
-0.42
A
Reverse Recovery Time
tRR
17
ns
Reverse Recovery Charge
QRR
IF = -3.9 A, dIF/dt = 100 A/μs
7
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 0.001 in
2 pad of 2oz. copper; 270℃/W when mounted on min.



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