UT3400

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-371.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

Continuous Drain Current

5.8

A

Pulsed Drain Current (Note 2)

30

A

Power Dissipation

1.4

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Pulse width ≤300μs, duty cycle≤0.5%.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note)

85

125

°C/W

Note: Surface mounted on 1 in

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.7

1.1

1.4

V

On-State Drain Current

30

A

22.8

28

mΩ

27.3

33

mΩ

Drain to Source On-state Resistance

43.3

52

mΩ

DYNAMIC PARAMETERS

Input Capacitance

823

pF

Output Capacitance

99

pF

Reverse Transfer Capacitance

77

pF

Gate Resistance

1.2

Ω

SWITCHING PARAMETERS

Turn-ON Delay Time

5.5

ns

Turn-ON Rise Time

5.1

ns

Turn-OFF Delay Time

37

ns

Turn-OFF Fall-Time

4.2

ns

Total Gate Charge

9.7

nC

Gate Source Charge

1.6

nC

Gate Drain Charge

3.1

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.71

1

V

Diode Continuous Forward Current ( Note 1)

2.5

A

Reverse Recovery Time

16

ns

Reverse Recovery Charge

8.9

nC

2. Pulse width ≤300μs, duty cycle≤0.5%.