UT3401Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-163.E

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

Continuous (Note2)

-4.2

A

Drain Current

Pulsed (Note3)

-30

A

Power Dissipation (Note 2)

1.4

W

ESD(HBM)

±100

V

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Pulse width ≤300µs, duty cycle ≤2%

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

65

90

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±5µA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.7

-1

-1.3

V

42

50

mΩ

53

65

mΩ

Drain-Source On-State Resistance (Note 2)

80

120

mΩ

DYNAMIC PARAMETERS

Input Capacitance

954

pF

Output Capacitance

115

pF

Reverse Transfer Capacitance

77

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

6.3

ns

Turn-ON Rise Time

3.2

ns

Turn-OFF Delay Time

38.2

ns

Turn-OFF Fall Time

12

ns

Total Gate Charge (Note 2)

9.4

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

3

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

-0.75

-1

V

Maximum Continuous Drain-Source Diode

Forward Current

-2.2

A

Reverse Recovery Time

20.2

ns

Reverse Recovery Charge

11.2

nC

2. Pulse width ≤300µs, duty cycle ≤2%

3. Surface mounted on 1 in