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UT3403G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT3403G-AE3-R
功能描述  -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT3403G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT3403G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT3403G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT3403G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT3403G-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UT3403
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-145.D
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (Note 3)
ID
-2.6
A
Pulsed Drain Current (Note 1)
IDM
-20
A
Power Dissipation(Note 3)
PD
1.4
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
100
125
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250μA, VGS=0V
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±12V
±
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250μA
-0.6
-1
-1.4
V
VGS=-10V, ID=-2.6A
102
130
mΩ
VGS=-4.5V, ID=-2A
128
180
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-2.5V, ID=-1A
187
260
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
409
500
pF
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
VGS =0V, VDS =-15V, f=1MHz
42
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
5.3
8
ns
Turn-ON Rise Time
tR
4.4
9
ns
Turn-OFF Delay Time
tD(OFF)
31.5
45
ns
Turn-OFF Fall Time
tF
VGS=-10V, VDS=-15V
RL=6Ω, RG =3Ω
8
16
ns
Total Gate Charge (Note 2)
QG
4.4
5.3
nC
Gate-Source Charge
QGS
0.8
nC
Gate-Drain Charge
QGD
VGS=-4.5V, VDS=-15V,
ID=-2.5A
1.32
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1A
-0.85
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2
A
Reverse Recovery Time
tRR
15.8
19
ns
Reverse Recovery Charge
QRR
IF=-2.5A, dI/dt=100A/μs
8
12
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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