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UT3409L-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT3409L-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT3409L-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT3409L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT3409L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT3409L-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT3409L-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UT3409
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-244.D
ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
-2.6
A
Pulsed Drain Current (Note 2)
IDM
-20
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
Surface mounted on 1 in
2 copper pad of FR4 board
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
90
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=-250μA, VGS=0V
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
μA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250μA
-1
-1.9
-3
V
On state drain current
ID(ON)
VGS=-4.5V, VDS=-5V
-5
A
VGS=-10V, ID=-2.6A
97
130
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS=-4.5V, ID=-2A
166
200
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
302
370
pF
Output Capacitance
COSS
50.3
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-15V, f=1MHz
37.8
pF
SWITCHING PARAMETERS
10V
6.8
9
nC
Total Gate Charge
4.5V
QG
2.4
nC
Gate Source Charge
QGS
1.6
nC
Gate Drain Charge
QGD
VGS=-10V, VDS=-15V, ID=-2.6A
0.95
nC
Turn-ON Delay Time
tD(ON)
7.5
ns
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF)
17
ns
Turn-OFF Fall-Time
tF
VGS=-10V, VDS=-15V,
RL=5.8Ω, RGEN=3Ω
6.8
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-0.82
-1
V
Maximum Body-Diode Continuous Current
IS
-2
A
Body Diode Reverse Recovery Time
tRR
IF=-2.6A, dI/dt=100A/μs
16.8
22
ns
Body Diode Reverse Recovery Charge
QRR
IF=-2.6A, dI/dt=100A/μs
10
nC



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