UT3443

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-557.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-4.5

Continuous

-3.6

Drain Current

Pulsed

-20

A

Power Dissipation (Note 2)

1.1

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

110

°C/W

Note: 1. Surface Mounted on FR4 Board, t≤5 sec

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

-1

Drain-Source Leakage Current

-5

µA

Forward

+100

nA

Gate- Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.6

-1.4

V

0.050 0.065

0.070 0.090

Static Drain-Source On-State Resistance

(Note 2)

0.080 0.100

Ω

SWITCHING PARAMETERS

(Note 3)

Total Gate Charge

7.3

15

nC

Gate to Source Charge

2.0

nC

Gate to Drain Charge

1.9

nC

Gate Resistance

3

15

Ω

Turn-ON Delay Time

15

50

ns

Rise Time

32

60

ns

Turn-OFF Delay Time

50

100

ns

Fall-Time

45

80

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note 2)

-0.8

-1.2

V

Body Diode Reverse Recovery Time

35

80

ns

Notes: 2. Pulse test; pulse width ≤300μs, duty cycle ≤2%.

3. Guaranteed by design, not subject to production testing.