UT4101L-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

UT4101

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-164.C

ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

VDS

-20

Gate-Source Voltage

VGS

±8.0

Continuous Drain Current (Note 3)

-2.4

Pulsed Drain Current (Note 1, 2)

IDM

-7.5

Power Dissipation

1.25

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

100

℃

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =-250µA

-20

Drain-Source Leakage Current

IDSS

VDS =-16 V, VGS =0 V

-1.0

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±8.0 V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =-250 µA

-0.40 -0.72

-1.5

VGS =-4.5 V, ID =-1.6 A

VGS =-2.5 V, ID =-1.3 A

120

Drain-Source On-State Resistance (Note 2)

RDS(ON)

VGS =-1.8 V, ID =-0.9 A

112

210

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

675

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

VDS =-10 V, VGS =0V,

f=1MHz

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

7.5

Turn-ON Rise Time

12.6

Turn-OFF Delay Time

tD(OFF)

30.2

Turn-OFF Fall-Time

VGS=-4.5V,VDS=-10V,RG

=6.0 Ω,

ID =-1.6A

21.0

Gate Charge

VDS=-10 V, VGS =-4.5 V, ID

=-1.6A

7.5

8.5

Gate Source Charge

QGS

1.2

Gate Drain Charge

QGD

VDS=-10 V, ID =-1.6A

2.2

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

VGS=0V, IS=-2.4 A

-0.82

-1.2

Maximum Continuous Drain-Source Diode

Forward Current

-2.4

Reverse Recovery Time

tRR

VGS=0V, dISD/dt=100A/μs,

IS =-1.6A

12.8

Reverse Recovery Charge

QRR

1008

Note: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board

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