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UT4232G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT4232G-S08-R
功能描述  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4232G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT4232G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4232G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4232G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4232G-S08-R Datasheet HTML 4Page - Unisonic Technologies  
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UT4232
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-337.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Ta=25°C)(Note 2)
ID
7.8
A
Pulsed Drain Current (Note 3)
IDM
30
A
2
W
Power Dissipation (Ta=25°C)
Derate above Ta>25°C
PD
0.016
W/°C
Junction Temperature
TJ
+150
°C
Junction and Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: 1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Surface mounted on 1 in
2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min
Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
62.5
°C/W
Note: Surface mounted on 1 in
2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250 µA
30
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ Reference to 25°C,ID=1mA
0.02
V/°C
Drain-Source Leakage Current
IDSS
VDS=30 V,VGS=0 V
1
µA
Gate-Source Leakage Current
IGSS
VGS=±20 V, VDS=0 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VD S= VGS, ID=250 µA
1
3
V
VGS=10 V, ID=7 A
22
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5 V, ID=5 A
32
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
720
1150
pF
Output Capacitance
COSS
230
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0 V, f=1MHz
200
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
10
ns
Turn-ON Rise Time
tR
7
ns
Turn-OFF Delay Time
tD(OFF)
22
ns
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V, RD=15Ω,
RG=3.3Ω, ID=1 A
8
ns
Total Gate Charge
QG
13
21
nC
Gate Source Charge
QGS
3
nC
Gate Drain Charge
QGD
VGS=4.5 V, VDS=24 V, ID=7 A
9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.7 A, VGS=0 V
1.2
V
Reverse Recovery Time
tRR
16
ns
Reverse Recovery Charge
QRR
IS=7 A, VGS=0 V, dI/dt=100A/μs
8
nC



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