UT4392

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-312.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

12.5

A

Pulsed Drain Current

50

A

3.0

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (PCB mounted)

50

°C/W

Junction to Case

25

°C/W

Notes: 1. Pulse width limited by the Maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate-Threshold Voltage

1

1.8

3

V

On State Drain Current (Note 1)

30

A

9

11.5 mΩ

Static Drain-Source On-Resistance(Note 1)

13

16.5 mΩ

DYNAMIC PARAMETERS

Input Capacitance

2134

pF

Output Capacitance

343

pF

Reverse Transfer Capacitance

f=1.0MHz, (Note 2)

134

pF

SWITCHING PARAMETERS

Total Gate Charge

26

nC

Gate Source Charge

6

nC

Gate Drain Charge

5

nC

Turn-ON Delay Time

17

ns

Turn-ON Rise Time

3.5

ns

Turn-OFF Delay Time

40

ns

Turn-OFF Fall-Time

6

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

0.85 1.3

V

Maximum Body-Diode Continuous Current

(Note 4,5)

2.7

A

Notes: 1. Pulse Test: PW ≤300μS, Duty Cycle ≤2%

2. For DESIGN AID ONLY, not subject to production testing.

3. Switching time is essentially independent of operating temperature.

4. Pulse width limited by the Maximum junction temperature.

5. Surface Mounted on FR4 Board, t ≤ 10 sec.