UT4410

Power MOSFET

DJL

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-238.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

11.6

A

Pulsed Drain Current

46.4

A

Power Dissipation

3.6

W

Junction Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

60

℃

/W

Notes: The device mounted on 1in

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate-Threshold Voltage

1.3

1.6

3.0

V

12

18

Static Drain–Source On–Resistance(Note)

17

20

mΩ

On-State Drain Current(Note)

20

A

DYNAMIC PARAMETERS

Input Capacitance

700 800

pF

Output Capacitance

120

pF

Reverse Transfer Capacitance

35

pF

Gate Resistance

0.9

Ω

SWITCHING PARAMETERS

Turn-ON Delay Time

14

32

ns

Turn-ON Rise Time

12

64

ns

Turn-OFF Delay Time

43

280

ns

Turn-OFF Fall-Time

4

192

ns

Total Gate Charge

11

15

nC

Total Gate Charge

20

26

nC

Gate Source Charge

5

nC

Gate Drain Charge

4.9

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.7

1.1

V

Note: Pulse test; pulse width ≤ 300us, duty cycle≤ 2%