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UT4414G-S08-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UT4414G-S08-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-378.a N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. This device can be applied in a load switch or in PWM applications. FEATURES * VDSS = 30V * ID=8.5A @VGS=10V * RDS(ON)<26mΩ @VGS=10V * RDS(ON)<40mΩ @VGS=4.5V SYMBOL Gate Source Drain SOP-8 ORDERING INFORMATION Ordering Number Package Packing UT4414G-S08-R SOP-8 Tape Reel (1) R: Tape Reel (2) S08: SOP-8 (3) G: Halogen Free UT4414G-S08-R (1) Packing Type (2) Package Type (3) Halogen Free |
类似零件编号 - UT4414G-S08-R |
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类似说明 - UT4414G-S08-R |
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