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UT4410G-S08-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UT4410G-S08-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-238.A N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES * RDS(ON) < 18mΩ @VGS = 4.5V * RDS(ON) < 12mΩ @VGS = 10 V * Ultra low gate charge ( typical 11 nC ) * Low reverse transfer capacitance ( CRSS = typical 35 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain Lead-free: UT4410L Halogen-free: UT4410G ORDERING INFORMATION Ordering Number Normal Lead Free Plating Halogen Free Package Packing UT4410-S08-R UT4410L-S08-R UT4410G-S08-R SOP-8 Tape Reel UT4410-S08-T UT4410L-S08-T UT4410G-S08-T SOP-8 Tube |
类似零件编号 - UT4410G-S08-R |
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类似说明 - UT4410G-S08-R |
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