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UT4413L-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT4413L-S08-R
功能描述  P-CHANNEL ENHANCEMENT MODE
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4413L-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT4413L-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4413L-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4413L-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4413L-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4413L-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4413L-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UT4413
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-198.A
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 1)
ID
-15
A
Pulsed Drain Current (Note 2)
IDM
-80
A
Power Dissipation(TC=25°C)
PD
3
W
Junction a Temperature
TJ
+150
℃
Strong Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
62
75
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-24 V, VGS =0 V
-1
µA
Drain-Source Breakdown Voltage
IGSS
VDS =0 V, VGS = ±25 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1.5
-2.2
-3.5
V
On State Drain Current
ID(ON)
VDS =-5V, VGS =-10 V
-60
A
VGS =-20V, ID =-15A
5.5
7
mΩ
VGS =-10 V, ID =-15 A
6.6
8.5
Static Drain-Source On-Resistance
RDS(ON)
VGS =-6 V, ID =-10 A
8.2
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
4245 5500
Output Capacitance
COSS
983
Reverse Transfer Capacitance
CRSS
VDS =-15V, VGS =0V, f=1MHz
689
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
69
90
Gate Source Charge
QGS
15.2
Gate Drain Charge
QGD
VDS =-15V, VGS =-10V, ID =-15A
18.8
nC
Turn-ON Delay Time
tD(ON)
16.5
Turn-ON Rise Time
tR
23.5
Turn-OFF Delay Time
tD(OFF)
116
Turn-OFF Fall-Time
tF
VGS=-10V,VDS=-15V,RL=1.0Ω,
RGEN =3Ω
82
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
IS=-1A,VGS=0V
-0.72
-1
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
5
A
Reverse Recovery Time
tRR
IF=-15 A, dI/dt=100A/μs
59
77
ns
Reverse Recovery Charge
QRR
IF=-15 A, dI/dt=100A/μs
55
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5% max.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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