UT4422G-S08-R datasheet(4/6 Pages) UTC

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UT4422G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名	UT4422G-S08-R

功能描述	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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UT4422G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies

UT4422G-S08-R Datasheet HTML 1Page - Unisonic Technologies

UT4422G-S08-R Datasheet HTML 2Page - Unisonic Technologies

UT4422G-S08-R Datasheet HTML 3Page - Unisonic Technologies

UT4422G-S08-R Datasheet HTML 4Page - Unisonic Technologies

UT4422G-S08-R Datasheet HTML 5Page - Unisonic Technologies

UT4422G-S08-R Datasheet HTML 6Page - Unisonic Technologies

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UT4422

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-206.B

TYPICAL CHARACTERISTICS

Body-Diode Characteristics

Gate to Source Voltage,VGS (V)

On-Resistance vs. Gate-Source Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

0.0

0.2

0.4

0.6

0.8

1.0

Body Diode Forward Voltage,VSD (V)

810

125°С

25°С

ID=10A

125°С

25°С

Pulse width ≤80μs,

duty cycle ≤0.5%.

Pulse width ≤80μs,

duty cycle ≤0.5%.

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1 2 3 4 5 6

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